| io duct6,, line. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 rfm12n18/12n20 rfp12n18/12n20 n-channel enhancement mode power field effect transistors abaolut* maximum ratings (tc - drabfsoufc* volug* , , , , continuous drain outran! rms continuous puued drain current..,,, galfr-sourcavotta0> maximum power dlulpation tc ? +25oc at>ov?tc-+25c,d?rataljn?riy ?? temparaturaflanoa 260q,unle? .... id inu vrs .. tj,t8to rfu12n1i hfu12n20 180 200 180 300 12 12 30 30 20 20 100 100 04 0* -$610+150 -5510+150 rfpiwu 180 100 12 30 20 75 of -55 la+150 rfp1xn2o 500 zoo 12 3o 20 75 0.6 -55 10*150 unit* v v a a v w w/?c ?c electrical characteristic*, at cut remperefur* (r.)>25'c unlttt othwwltt tpfdllfd chmuctihwtic drain-source breakdown voltage qate-threthold voltage zero-oite voltage drain current gilt-source leakage current drain-source on voltage static drain-source on refinance forward tranaconductance input capacitance output capacitance reveree-tranafer capacitance turn-on delay time riw time turn-on delay time fall time thermal rebalance junction>to-cue ?vmbol bvwt yum lew lew v?(on)? r?(on,? """ c*. c? c_ won) j, u(otl) t> rm tut condition** lo-lma v?-0 vh-vm lo>1 ma v?-145 v v?-ieo v te?125'c vm-145v vm-180v v?-20v vd.-o v^10v if 12 a vm>10v vm-10v v?-10 v v?-25v vm-ov l-imhz vw?100v !??** fio-'iv'so n vw-10 v rfm12n18. RFM12N20 rfp12n18, rfp12n20 rfmia mp12 hln. 180 2 ^ - ~" ^ ? ? 4 ? ? ? 35(typ 30(typ 20(typ 05(lyp - _ umr m18 n18 ?ax. -~ 4 1 60 100 1.6 3.6 oj5 m~ 1700 boo 300 so 200 180 1(0 1.25 ur rs mina ma. 200 2 - ~ ~- ? ~- 4 _ ? _ 3s(lyp ^ottyp 20(typ i05(lyp - - m20 hal. ? 4 1 so 100 1.5 3f 0,25 -^ 1700 600 300 50 200 180 160 1.25 1.67 unit* v v * mhmcc-mmm mooc mthms amd characteristics chahacterictic diode forward voltage symbol v?' u test comfmtions i?*8a 1^4 a u,./a,-100a/^> limits rfm12n1i rfp12nu him. _ max. 1.4 32s(typ) rfm12n30 rfp12n20 mm. ? max. 1.4 3z5 |
